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| H5N2007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0370-0100Z Rev.1.00 May.28.2004 Features * Low on-resistance * Low leakage current * High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 200 30 25 100 25 100 9 5.4 30 4.17 150 -55 to +150 Unit V V A A A A A mJ W C/W C C Rev.1.00, May.28.2004, page 1 of 7 H5N2007FN Electrical Characteristics (Ta = 25C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 200 -- -- 3.0 13 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 22 0.036 2200 410 54 35 120 110 85 56 13 26 0.9 140 0.7 Max -- 1 0.1 4.0 -- 0.047 -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 12.5 A, VDS = 10 V Note4 ID = 12.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 12.5 A VGS = 10 V RL = 8 Rg = 10 VDD = 160 V VGS = 10 V ID = 25 A IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0 diF/dt = 100 A/s Rev.1.00, May.28.2004, page 2 of 7 H5N2007FN Main Characteristics Power vs. Temperature Derating 40 Pch (W) Maximum Safe Operation Area 1000 300 ID (A) 30 100 30 10 3 1 0.3 Operation in 0.03 this area is 0.1 limited by RDS(on) DC PW Op er Channel Dissipation Drain Current 10 0 s 1m = s 10 ms 10 1s at ion 20 s( (T c= ho C t) 25 ) 10 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 VDS = 10 V Pulse Test Typical Output Characteristics 100 10 V 8V ID (A) ID (A) Pulse Test 7V 80 80 60 6V 60 Drain Current 40 Drain Current 40 20 VGS = 5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 20 Tc = 75C 25C -25C 8 10 VGS (V) 0 2 4 6 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 4 3 2 I D = 45 A 22.5 A 12.5 A 1 Drain to Source on State Resistance RDS(on) () 5 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V 0.1 0.05 0.02 0 0.01 12 4 8 Gate to Source Voltage 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100 Rev.1.00, May.28.2004, page 3 of 7 H5N2007FN Static Drain to Source on State Resistance vs. Temperature 0.200 Pulse Test 0.160 V GS = 10 V Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () 100 50 Tc = -25C 20 10 25C 5 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 ID (A) 50 100 75C 0.120 I D = 45 A 0.080 22.5 A 0.040 0 -40 12.5 A 0 40 80 120 Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time 160 Drain Current Typical Capacitance vs. Drain to Source Voltage 10000 5000 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) Ciss 2000 1000 500 200 100 50 20 200 100 50 Coss Crss 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics VGS (V) VGS = 0 f = 1 MHz 10 0 20 40 60 80 100 Drain to Source Voltage VDS (V) Switching Characteristics V GS = 10 V, V DD = 100 V PW = 5 s, duty < 1 % R G =10 1000 tf t d(off) 100 tf t d(on) 10 0.1 tr 500 VDS (V) I D = 45 A V DS = 50 V 100 V 160 V VGS 20 10000 400 16 Drain to Source Voltage 300 12 200 VDD V DS = 160 V 100 V 50 V 20 40 Gate Charge 60 80 Qg (nC) 8 100 4 0 100 Gate to Source Voltage Switching Time t (ns) tr 0.3 1 3 Drain Current 10 30 ID (A) 100 0 Rev.1.00, May.28.2004, page 4 of 7 H5N2007FN Reverse Drain Current vs. Source to Drain Voltage 100 5 Gate to Source Cutoff Voltage vs. Case Temperature V DS = 10 V I D = 10mA IDR (A) 80 Gate to Source Cutoff Voltage V GS(off) (V) 4 Reverse Drain Current 60 V GS = 0 V 3 1mA 2 0.1mA 40 10 V 20 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 1 0 -50 0 50 100 150 Tc (C) 200 Source to Drain Voltage VSD (V) Case Temperature Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 Normalized Transient Thermal Impedance s (t) D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 1 0.0 tp ul se 0.01 ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T 0.003 0.001 10 1s D= PW T ho 100 1m 10 m Pulse Width PW (s) 100 m 1 10 Rev.1.00, May.28.2004, page 5 of 7 H5N2007FN Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 100 V Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% Rev.1.00, May.28.2004, page 6 of 7 H5N2007FN Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Ordering Information Part Name Quantity Shipping Container H5N2007FN-E 50 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, May.28.2004, page 7 of 7 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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